Theoretical investigation of carrier transport and recombination processes for deep UV (Al,Ga)N light emitters

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dc.contributor.authorFinn, Roberten
dc.contributor.authorO’Donovan, Michaelen
dc.contributor.authorFarrell, Patricioen
dc.contributor.authorStreckenbach, Timoen
dc.contributor.authorMoatti, Julienen
dc.contributor.authorKoprucki, Thomasen
dc.contributor.authorSchulz, Stefanen
dc.contributor.funderSustainable Energy Authority of Irelanden
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderLeibniz-Gemeinschaften
dc.contributor.funderLabexen
dc.date.accessioned2023-11-08T12:54:58Z
dc.date.available2023-11-08T12:54:58Z
dc.date.issued2023-10-09en
dc.description.abstractWe present a theoretical study on the impact of alloy disorder on carrier transport and recombination rates in an (Al,Ga)N single quantum well based LED operating in the deep UV spectral range. Our calculations indicate that alloy fluctuations enable ‘percolative pathways’ which can result in improved carrier injection into the well, but may also increase carrier leakage from the well. Additionally, we find that alloy disorder induces carrier localization effects, a feature particularly noticeable for the holes. These localization effects can lead to locally increased carrier densities when compared to a virtual crystal approximation which neglects alloy disorder. We observe that both radiative and non-radiative recombination rates are increased. Our calculations also indicate that Auger-Meitner recombination increases faster than the radiative rate, based on a comparison with a virtual crystal approximation.en
dc.description.sponsorshipScience Foundation Ireland (12/RC/2276 P2; 21/FFP-A/9014); Leibniz-Gemeinschaft (Leibniz Competition 2020; Leibniz Competition 2022 UVSimTec K415/2021); Labex CEMPI (ANR11-LABX-0007-01)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationFinn, R., O’Donovan, M., Farrell, P., Streckenbach, T., Moatti, J., Koprucki, T. and Schulz, S. (2023) 'Theoretical investigation of carrier transport and recombination processes for deep UV (Al,Ga)N light emitters', 2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Turin, Italy, 18-21 September, pp. 83-84. doi: 10.1109/NUSOD59562.2023.10273485en
dc.identifier.doi10.1109/nusod59562.2023.10273485en
dc.identifier.eissn2158-3242en
dc.identifier.endpage84en
dc.identifier.isbn979-8-3503-1429-8en
dc.identifier.isbn979-8-3503-1430-4en
dc.identifier.issn2158-3234en
dc.identifier.startpage83en
dc.identifier.urihttps://hdl.handle.net/10468/15208
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.ispartof2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Career Development Award/17/CDA/4789(N)/IE/Nitride-based light emitters: From carrier localization and non-radiative recombination processes to quantum transport and device design/en
dc.rights© 2023, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectLocation awarenessen
dc.subjectSolid modelingen
dc.subjectThree-dimensional displaysen
dc.subjectMetalsen
dc.subjectCharge carrier densityen
dc.subjectRadiative recombinationen
dc.subjectCrystalsen
dc.titleTheoretical investigation of carrier transport and recombination processes for deep UV (Al,Ga)N light emittersen
dc.typeConference itemen
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