Atomistic study of Urbach tail energies in (Al,Ga)N quantum well systems

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dc.contributor.authorO'Donovan, Michaelen
dc.contributor.authorFinn, Roberten
dc.contributor.authorSchulz, Stefanen
dc.contributor.authorKoprucki, Thomasen
dc.contributor.funderLeibniz-Gemeinschaften
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderSustainable Energy Authority of Irelanden
dc.date.accessioned2023-11-08T14:22:58Z
dc.date.available2023-11-08T14:22:58Z
dc.date.issued2023-10-09en
dc.description.abstractAluminium gallium nitride is a system of interest for developing ultraviolet (UV) optoelectronic devices. Here Urbach tails induced by carrier localization effects play a key role in determining device behaviour. We study the electronic structure of Al x Ga 1−x N/Al y Ga 1−y N single quantum wells using an atomistic framework. Results show that the density of states exhibits a tail at low energies due to disorder in the alloy microstructure. Our analysis allows for insight into the orbital character of the states forming the Urbach tails, which can affect light polarization characteristics, and important quantity for deep UV light emitters.en
dc.description.sponsorshipLeibniz-Gemeinschaft (Leibniz Competition 2022 (UVSimTec, K415/2021)); Science Foundation Ireland and the Sustainable Energy Authority of Ireland (No. 12/RC/2276 P2)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationO'Donovan, M., Finn, R., Schulz, S. and Koprucki, T. (2023) 'Atomistic study of Urbach tail energies in (Al,Ga)N quantum well systems', 2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Turin, Italy, 18-21 September, pp. 79-80. doi: 10.1109/NUSOD59562.2023.10273479en
dc.identifier.doi10.1109/nusod59562.2023.10273479en
dc.identifier.eissn2158-3242en
dc.identifier.endpage80en
dc.identifier.isbn979-8-3503-1429-8en
dc.identifier.isbn979-8-3503-1430-4en
dc.identifier.issn2158-3234en
dc.identifier.startpage79en
dc.identifier.urihttps://hdl.handle.net/10468/15209
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.ispartof2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Career Development Award/17/CDA/4789(N)/IE/Nitride-based light emitters: From carrier localization and non-radiative recombination processes to quantum transport and device design/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Frontiers for the Future::Award/21/FFP-A/9014/IE/Boron Containing III-N Alloys for Next Generation Visible and UV Light Emitting Devices/en
dc.rights© 2023, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectLocation awarenessen
dc.subjectOptical polarizationen
dc.subjectQuantum mechanicsen
dc.subjectTailen
dc.subjectProbabilityen
dc.subjectNumerical simulationen
dc.subjectLight emitting diodesen
dc.titleAtomistic study of Urbach tail energies in (Al,Ga)N quantum well systemsen
dc.typeConference itemen
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