The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications

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dc.contributor.authorToomey, B.
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorMonaghan, Scott
dc.contributor.authorDjara, Vladimir
dc.contributor.authorO'Connor, Éamon
dc.contributor.authorO'Connell, D.
dc.contributor.authorOberbeck, L.
dc.contributor.authorTois, E.
dc.contributor.authorBlomberg, T.
dc.contributor.authorNewcomb, S. B.
dc.contributor.authorHurley, Paul K.
dc.contributor.funderSixth Framework Programmeen
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderEuropean Commissionen
dc.contributor.funderGovernment of Irelanden
dc.date.accessioned2022-06-29T09:53:53Z
dc.date.available2022-06-29T09:53:53Z
dc.date.issued2012-01-12
dc.date.updated2022-06-27T11:15:14Z
dc.description.abstractHafnium erbium oxide (HfErOx) thin films were formed using atomic layer deposition. The effect of using different Hf:Er pulse ratios on the electrical and structural properties of the HfErOx thin films (∼9 nm) in metal–insulator–metal (MIM) capacitor structures have been investigated and comparisons made between as-deposited and annealed samples. We report the stabilisation of the higher dielectric constant (k) tetragonal/cubic phase by optimising the Hf:Er pulse ratio. The dielectric properties post thermal anneal at 500 °C were studied. A leakage current in the order of ∼1 × 10−8 (A/cm2) at a voltage of 1 V and a capacitance equivalent thickness of ∼1.4 nm have been achieved post thermal annealing at 500 °C.en
dc.description.sponsorshipSixth Framework Programme (REALISE Project NMP4-CT-2006-016172); European Commission (European Union Structural Funds); Government of Ireland (Irish National Development Plan)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationToomey, B., Cherkaoui, K., Monaghan, S., Djara, V., O’Connor, É., O’Connell, D., Oberbeck, L., Tois, E., Blomberg, T., Newcomb, S. B. and Hurley, P. K. (2012) 'The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications', Microelectronic Engineering, 94, pp. 7-10. doi: 10.1016/j.mee.2012.01.001en
dc.identifier.doi10.1016/j.mee.2012.01.001en
dc.identifier.endpage10en
dc.identifier.issn0167-9317
dc.identifier.journaltitleMicroelectronic Engineeringen
dc.identifier.startpage7en
dc.identifier.urihttps://hdl.handle.net/10468/13329
dc.identifier.volume94en
dc.language.isoenen
dc.publisherElsevier B.V.en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/09/IN.1/I2633/IE/Investigating Emerging Non-Silicon Transistors (INVENT)/en
dc.rights© 2012, Elsevier B.V. All rights reserved. This manuscript version is made available under the CC BY-NC-ND 4.0 license.en
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectALDen
dc.subjectCapacitoren
dc.subjectDynamic random access memory (DRAM)en
dc.subjectHigh-ken
dc.subjectMetal–insulator–metal (MIM)en
dc.subjectHfD-04en
dc.titleThe structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applicationsen
dc.typeArticle (peer-reviewed)en
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