The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications
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Date
2012-01-12
Authors
Toomey, B.
Cherkaoui, Karim
Monaghan, Scott
Djara, Vladimir
O'Connor, Éamon
O'Connell, D.
Oberbeck, L.
Tois, E.
Blomberg, T.
Newcomb, S. B.
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier B.V.
Published Version
Abstract
Hafnium erbium oxide (HfErOx) thin films were formed using atomic layer deposition. The effect of using different Hf:Er pulse ratios on the electrical and structural properties of the HfErOx thin films (∼9 nm) in metal–insulator–metal (MIM) capacitor structures have been investigated and comparisons made between as-deposited and annealed samples. We report the stabilisation of the higher dielectric constant (k) tetragonal/cubic phase by optimising the Hf:Er pulse ratio. The dielectric properties post thermal anneal at 500 °C were studied. A leakage current in the order of ∼1 × 10−8 (A/cm2) at a voltage of 1 V and a capacitance equivalent thickness of ∼1.4 nm have been achieved post thermal annealing at 500 °C.
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Keywords
ALD , Capacitor , Dynamic random access memory (DRAM) , High-k , Metal–insulator–metal (MIM) , HfD-04
Citation
Toomey, B., Cherkaoui, K., Monaghan, S., Djara, V., O’Connor, É., O’Connell, D., Oberbeck, L., Tois, E., Blomberg, T., Newcomb, S. B. and Hurley, P. K. (2012) 'The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications', Microelectronic Engineering, 94, pp. 7-10. doi: 10.1016/j.mee.2012.01.001