Relationship between capacitance and conductance in MOS capacitors

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dc.contributor.authorCaruso, Enrico
dc.contributor.authorLin, Jun
dc.contributor.authorMonaghan, Scott
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorFloyd, Liam
dc.contributor.authorGity, Farzan
dc.contributor.authorPalestri, Pierpaolo
dc.contributor.authorEsseni, David
dc.contributor.authorSelmi, Luca
dc.contributor.authorHurley, Paul K.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderHorizon 2020en
dc.date.accessioned2019-10-29T09:56:45Z
dc.date.available2019-10-29T09:56:45Z
dc.date.issued2019-09
dc.date.updated2019-10-29T09:45:59Z
dc.description.abstractIn this work, we describe how the frequency dependence of conductance (G) and capacitance (C) of a generic MOS capacitor results in peaks of the functions G/ω and -ωdC/dω. By means of TCAD simulations, we show that G/ω and -ωdC/dω peak at the same value and at the same frequency for every bias point from accumulation to inversion. We illustrate how the properties of the peaks change with the semiconductor doping (ND), oxide capacitance (COX), minority carrier lifetime (τg), interface defect parameters (NIT, σ) and majority carrier dielectric relaxation time (τr). Finally, we demonstrate how these insights on G/ω and -ωdC/dω can be used to extract COX, ND and τg from InGaAs MOSCAP measurements.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationCaruso, E., Lin, J., Monaghan, S., Cherkaoui, K., Floyd, L., Gity, F., Palestri, P., Esseni, D., Selmi, L. and Hurley, P. K. (2019) 'Relationship between capacitance and conductance in MOS capacitors', 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, 4-6 Sept. 2019, (4 pp). doi: 10.1109/SISPAD.2019.8870553en
dc.identifier.doi10.1109/SISPAD.2019.8870553en
dc.identifier.endpage4en
dc.identifier.isbn978-1-7281-0940-4
dc.identifier.isbn978-1-7281-0939-8
dc.identifier.isbn978-1-7281-0941-1
dc.identifier.issn1946-1577
dc.identifier.issn1946-1569
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/8908
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3131/IE/Investigating Emerging 2D Semiconductor Technology/en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/688784/EU/Integration of III-V Nanowire Semiconductors for next Generation High Performance CMOS SOC Technologies/INSIGHTen
dc.relation.urihttps://ieeexplore.ieee.org/document/8870553
dc.rights© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectCapacitanceen
dc.subjectMOS capacitorsen
dc.subjectIndium gallium arsenideen
dc.subjectSemiconductor device measurementen
dc.subjectFrequency modulationen
dc.subjectCapacitance-voltage characteristicsen
dc.subjectFrequency measurementen
dc.subjectCharacterizationen
dc.subjectextraction techniqueen
dc.subjectMOSen
dc.subjectmulti-frequencyen
dc.subjectC-Ven
dc.subjectG-Ven
dc.subjectMinority carrier lifetimeen
dc.subjectOxide capacitanceen
dc.subjectDopingen
dc.titleRelationship between capacitance and conductance in MOS capacitorsen
dc.typeConference itemen
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