Degradation dynamics and breakdown of MgO gate oxides
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Date
2009-03-09
Authors
Miranda, Enrique
O'Connor, Éamon
Hughes, Gregory
Casey, P.
Cherkaoui, Karim
Monaghan, Scott
Long, Rathnait D.
O'Connell, Dan
Hurley, Paul K.
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier B.V.
Published Version
Abstract
The degradation dynamics of magnesium oxide (MgO) layers in MOS structures has been investigated. It is shown that the shift of the conduction characteristics caused by both ramped and constant voltage stresses is well described by power-law models and that the signature of charge trapping is still visible even after the dielectric breakdown (BD) of the insulating film. The occurrence of progressive BD in 20-nm thick films is also reported.
Description
Keywords
MOS , Breakdown , Magnesium oxide
Citation
Miranda, E., O'Connor, E., Hughes, G.,Casey, P., Cherkaoui, K., Monaghan, S., Long, R., O'Connell, D. and Hurley, P. K. (2009) 'Degradation dynamics and breakdown of MgO gate oxides', Microelectronic Engineering, 86(7-9), pp. 1715-1717. doi: 10.1016/j.mee.2009.03.009