Degradation dynamics and breakdown of MgO gate oxides

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dc.contributor.authorMiranda, Enrique
dc.contributor.authorO'Connor, Éamon
dc.contributor.authorHughes, Gregory
dc.contributor.authorCasey, P.
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorMonaghan, Scott
dc.contributor.authorLong, Rathnait D.
dc.contributor.authorO'Connell, Dan
dc.contributor.authorHurley, Paul K.
dc.contributor.funderGeneralitat de Catalunyaen
dc.contributor.funderMinisterio de Ciencia y Tecnologíaen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2022-07-20T14:59:56Z
dc.date.available2022-07-20T14:59:56Z
dc.date.issued2009-03-09
dc.date.updated2022-07-19T20:50:38Z
dc.description.abstractThe degradation dynamics of magnesium oxide (MgO) layers in MOS structures has been investigated. It is shown that the shift of the conduction characteristics caused by both ramped and constant voltage stresses is well described by power-law models and that the signature of charge trapping is still visible even after the dielectric breakdown (BD) of the insulating film. The occurrence of progressive BD in 20-nm thick films is also reported.en
dc.description.sponsorshipGeneralitat de Catalunya (BE-2007); Ministerio de Ciencia y Tecnología (project number TEC2006-13731-C02-01); Science Foundation Ireland (05/IN/1751; National Access Program at the Tyndall National Institute)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationMiranda, E., O'Connor, E., Hughes, G.,Casey, P., Cherkaoui, K., Monaghan, S., Long, R., O'Connell, D. and Hurley, P. K. (2009) 'Degradation dynamics and breakdown of MgO gate oxides', Microelectronic Engineering, 86(7-9), pp. 1715-1717. doi: 10.1016/j.mee.2009.03.009en
dc.identifier.doi10.1016/j.mee.2009.03.009en
dc.identifier.endpage1717en
dc.identifier.issn0167-9317
dc.identifier.issued7-9en
dc.identifier.journaltitleMicroelectronic Engineeringen
dc.identifier.startpage1715en
dc.identifier.urihttps://hdl.handle.net/10468/13384
dc.identifier.volume86en
dc.language.isoenen
dc.publisherElsevier B.V.en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI ETS Walton Visitor Award/07/W.1/I1828/IE/Degradation and breakdown of metal gate/high-k/III-V structures for advanced field-effect transistors/en
dc.rights© 2009, Elsevier B.V. All rights reserved. This manuscript version is made available under the CC BY-NC-ND 4.0 license.en
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectMOSen
dc.subjectBreakdownen
dc.subjectMagnesium oxideen
dc.titleDegradation dynamics and breakdown of MgO gate oxidesen
dc.typeArticle (peer-reviewed)en
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