Charged defect quantification in Pt/Al2O3/In0. 53Ga0. 47As/InP MOS capacitors
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Date
2011-01
Authors
Long, Rathnait D.
Shin, Byungha
Monaghan, Scott
Cherkaoui, Karim
Cagnon, J.
Stemmer, S.
McIntyre, Paul C.
Hurley, Paul K.
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Publisher
The Electrochemical Society
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Abstract
This work focuses on the separation and quantification of fixed bulk oxide charge, fixed charge at the dielectric–semiconductor interface and interface state charge components in the Pt/Al2O3/In0.53Ga0.47As metal-oxide-semiconductor (MOS) system. The availability of atomic layer deposited Al2O3 dielectrics over n- and p-type In0.53Ga0.47As with a range of well-controlled thickness values opens up an experimental route for the determination of the interface state density (Dit) independently of the total fixed oxide charge using capacitance–voltage measurements taken at 1 MHz and −50°C. Low temperature forming gas annealing (350°C) significantly reduces the amount of fixed charge. The interface fixed charge is reduced from ∼ −8.5 × 1012 cm−2 preanneal to ∼ −7.4 × 1011 cm−2 postanneal and the bulk oxide charge is reduced from ∼1.4 × 1019 cm−3 preanneal to ∼5 × 1018 cm−3 postanneal. The forming gas anneal also has a significant effect on the interface state charge, reducing its density from 1.3 × 1013cm−2 preanneal to 4 × 1012 cm−2 postanneal.
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Keywords
Dielectric devices , Dielectric materials , MOS capacitors , Atomic layer deposited , Phase interfaces
Citation
Long, R.D., Shin, B., Monaghan, S., Cherkaoui, K., Cagnon, J., Stemmer, S., McIntyre, P.C. and Hurley, P.K. (2011) ‘Charged defect quantification in pt∕al2o3∕in0. 53ga0. 47as∕inp mos capacitors’, Journal of the Electrochemical Society, 158(5), p. G103. https://doi.org/10.1149/1.3545799
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© 2011 The Electrochemical Society. This is the Accepted Manuscript version of an article accepted for publication in Journal of The Electrochemical Society. The Electrochemical Society and IOP Publishing Ltd are not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1149/1.3545799.