Charged defect quantification in Pt/Al2O3/In0. 53Ga0. 47As/InP MOS capacitors

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dc.contributor.authorLong, Rathnait D.
dc.contributor.authorShin, Byungha
dc.contributor.authorMonaghan, Scott
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorCagnon, J.
dc.contributor.authorStemmer, S.
dc.contributor.authorMcIntyre, Paul C.
dc.contributor.authorHurley, Paul K.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderFulbright Associationen
dc.contributor.funderIrish Research Council for Science, Engineering and Technologyen
dc.contributor.funderIntel Foundationen
dc.date.accessioned2022-12-06T15:55:04Z
dc.date.available2022-12-06T15:55:04Z
dc.date.issued2011-01
dc.date.updated2022-12-01T12:36:09Z
dc.description.abstractThis work focuses on the separation and quantification of fixed bulk oxide charge, fixed charge at the dielectric–semiconductor interface and interface state charge components in the Pt/Al2O3/In0.53Ga0.47As metal-oxide-semiconductor (MOS) system. The availability of atomic layer deposited Al2O3 dielectrics over n- and p-type In0.53Ga0.47As with a range of well-controlled thickness values opens up an experimental route for the determination of the interface state density (Dit) independently of the total fixed oxide charge using capacitance–voltage measurements taken at 1 MHz and −50°C. Low temperature forming gas annealing (350°C) significantly reduces the amount of fixed charge. The interface fixed charge is reduced from ∼ −8.5 × 1012 cm−2 preanneal to ∼ −7.4 × 1011 cm−2 postanneal and the bulk oxide charge is reduced from ∼1.4 × 1019 cm−3 preanneal to ∼5 × 1018 cm−3 postanneal. The forming gas anneal also has a significant effect on the interface state charge, reducing its density from 1.3 × 1013cm−2 preanneal to 4 × 1012 cm−2 postanneal.en
dc.description.sponsorshipScience Foundation Ireland (SFI 09/IN.1/I2633); Irish Research Council for Science, Engineering and Technology (IRCSET/Intel PhD scheme); Irish Fulbright Commission and Fulbright USA.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationLong, R.D., Shin, B., Monaghan, S., Cherkaoui, K., Cagnon, J., Stemmer, S., McIntyre, P.C. and Hurley, P.K. (2011) ‘Charged defect quantification in pt∕al2o3∕in0. 53ga0. 47as∕inp mos capacitors’, Journal of the Electrochemical Society, 158(5), p. G103. https://doi.org/10.1149/1.3545799en
dc.identifier.doi10.1149/1.3545799en
dc.identifier.eissn1945-7111
dc.identifier.endpageG107en
dc.identifier.issn0013-4651
dc.identifier.issued5en
dc.identifier.journaltitleJournal of the Electrochemical Societyen
dc.identifier.startpageG103en
dc.identifier.urihttps://hdl.handle.net/10468/13902
dc.identifier.volume158en
dc.language.isoenen
dc.publisherThe Electrochemical Societyen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/09/IN.1/I2633/IE/Investigating Emerging Non-Silicon Transistors (INVENT)/en
dc.relation.urihttps://doi.org/10.1149/1.3545799
dc.rights© 2011 The Electrochemical Society. This is the Accepted Manuscript version of an article accepted for publication in Journal of The Electrochemical Society. The Electrochemical Society and IOP Publishing Ltd are not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1149/1.3545799.en
dc.subjectDielectric devicesen
dc.subjectDielectric materialsen
dc.subjectMOS capacitorsen
dc.subjectAtomic layer depositeden
dc.subjectPhase interfacesen
dc.titleCharged defect quantification in Pt/Al2O3/In0. 53Ga0. 47As/InP MOS capacitorsen
dc.typeArticle (peer-reviewed)en
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