Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)

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dc.contributor.authorHurley, Paul K.
dc.contributor.authorO'Connor, Eamon
dc.contributor.authorMonaghan, Scott
dc.contributor.authorLong, Rathnait D.
dc.contributor.authorO'Mahony, Aileen
dc.contributor.authorPavey, Ian M.
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorMacHale, John
dc.contributor.authorQuinn, Aidan
dc.contributor.authorBrammertz, Guy
dc.contributor.authorHeyns, Marc M.
dc.contributor.authorNewcomb, Simon
dc.contributor.authorAfanas'ev, Valeri V.
dc.contributor.authorSonnet, Arif
dc.contributor.authorGalatage, Rohit
dc.contributor.authorJivani, Naqi
dc.contributor.authorVogel, Eric
dc.contributor.authorWallace, Robert M.
dc.contributor.authorPemble, Martyn
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderIrish Research Council for Science, Engineering and Technologyen
dc.contributor.funderIntel Foundationen
dc.date.accessioned2022-12-06T16:20:59Z
dc.date.available2022-12-06T16:20:59Z
dc.date.issued2009-10
dc.date.updated2022-12-01T13:53:16Z
dc.description7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society; Vienna; Austria; 5 October 2009 through 7 October 2009; Code 79118en
dc.description.abstractIn this work results are presented of an investigation into the structural and electrical properties of HfO2 films on GaAs and InxGa1-xAs substrates for x: 0.15, 0.30, and 0.53. The capacitancevoltage responses of the GaAs and InxGa1-xAs (x: 0.15 and 0.30) are dominated by an interface defect response. Analysis of these samples at 77K indicates that the defect density is > 2.5x1013 cm-2. For the HfO2/In0.53Ga0.47As system, 77K capacitance-voltage responses indicate surface accumulation is achieved. The results are consistent with a high defect density, with an energy level {greater than or equal to}0.75 eV above the valence band in the HfO2/InxGa1-xAs system, where the defect energy with respect to the valence band, does not change with the composition of the InxGa1-xAs. The HfO2/In0.53Ga0.47As interface exhibits two defects at 0.3eV (1.7x1013cm-2eV) and 0.61eV (1.5x1013cm-2eV) above the valance band edge. The defect at 0.61eV is removed by forming gas annealing at 325oC.en
dc.description.sponsorshipScience Foundation Ireland (Projects 05/IN/1751 and 07/SRC/I1172); INTEL/ Irish Research Council for Science, Engineering and Technology (studentships scheme)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationHurley, P.K., O’Connor, E., Monaghan, S., Long, R., O’Mahony, A., Povey, I.M., Cherkaoui, K., MacHale, J., Quinn, A., Brammertz, G., Heyns, M.M., Newcomb, S., Afanas’ev, V.V., Sonnet, A., Galatage, R., Jivani, N., Vogel, E., Wallace, R.M. and Pemble, M. (2009) ‘Structural and Electrical Properties of HfO2/n-In x Ga 1-x As structures (X: 0, 0. 15, 0. 3 and 0. 53)’, ECS Transactions, 25(6), pp. 113–127. https://doi.org/10.1149/1.3206612.en
dc.identifier.doi10.1149/1.3206612en
dc.identifier.eissn1938-6737
dc.identifier.endpage127en
dc.identifier.isbn978-160768093-2
dc.identifier.isbn978-156677743-8
dc.identifier.issn1938-5862
dc.identifier.issued6en
dc.identifier.journaltitleECS Transactionsen
dc.identifier.startpage113en
dc.identifier.urihttps://hdl.handle.net/10468/13903
dc.identifier.volume25en
dc.language.isoenen
dc.publisherElectrochemical Societyen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Strategic Research Cluster/07/SRC/I1172/IE/SRC FORME: Functional Oxides and Related Materials for Electronics/en
dc.relation.urihttps://doi.org/10.1149/1.3206612
dc.rights© The Electrochemical Society. This is the Accepted Manuscript version of an article accepted for publication in ECS Transactions. The Electrochemical Society and IOP Publishing Ltd are not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1149/1.3206612en
dc.subjectDefect densityen
dc.subjectDielectric materialsen
dc.subjectGallium arsenideen
dc.subjectGate dielectricsen
dc.subjectHafnium oxidesen
dc.subjectHigh-k dielectricen
dc.subjectIII-V semiconductorsen
dc.subjectSemiconducting galliumen
dc.subjectSemiconductor alloysen
dc.subjectValence bandsen
dc.subjectCapacitanceen
dc.titleStructural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)en
dc.typeArticle (peer-reviewed)en
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