Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)

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Date
2009-10
Authors
Hurley, Paul K.
O'Connor, Eamon
Monaghan, Scott
Long, Rathnait D.
O'Mahony, Aileen
Pavey, Ian M.
Cherkaoui, Karim
MacHale, John
Quinn, Aidan
Brammertz, Guy
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Publisher
Electrochemical Society
Published Version
10.1149/1.3206612
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Abstract
In this work results are presented of an investigation into the structural and electrical properties of HfO2 films on GaAs and InxGa1-xAs substrates for x: 0.15, 0.30, and 0.53. The capacitancevoltage responses of the GaAs and InxGa1-xAs (x: 0.15 and 0.30) are dominated by an interface defect response. Analysis of these samples at 77K indicates that the defect density is > 2.5x1013 cm-2. For the HfO2/In0.53Ga0.47As system, 77K capacitance-voltage responses indicate surface accumulation is achieved. The results are consistent with a high defect density, with an energy level {greater than or equal to}0.75 eV above the valence band in the HfO2/InxGa1-xAs system, where the defect energy with respect to the valence band, does not change with the composition of the InxGa1-xAs. The HfO2/In0.53Ga0.47As interface exhibits two defects at 0.3eV (1.7x1013cm-2eV) and 0.61eV (1.5x1013cm-2eV) above the valance band edge. The defect at 0.61eV is removed by forming gas annealing at 325oC.
Description
7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society; Vienna; Austria; 5 October 2009 through 7 October 2009; Code 79118
Keywords
Defect density , Dielectric materials , Gallium arsenide , Gate dielectrics , Hafnium oxides , High-k dielectric , III-V semiconductors , Semiconducting gallium , Semiconductor alloys , Valence bands , Capacitance
Citation
Hurley, P.K., O’Connor, E., Monaghan, S., Long, R., O’Mahony, A., Povey, I.M., Cherkaoui, K., MacHale, J., Quinn, A., Brammertz, G., Heyns, M.M., Newcomb, S., Afanas’ev, V.V., Sonnet, A., Galatage, R., Jivani, N., Vogel, E., Wallace, R.M. and Pemble, M. (2009) ‘Structural and Electrical Properties of HfO2/n-In x Ga 1-x As structures (X: 0, 0. 15, 0. 3 and 0. 53)’, ECS Transactions, 25(6), pp. 113–127. https://doi.org/10.1149/1.3206612.
Link to publisher’s version
https://doi.org/10.1149/1.3206612
URI
https://hdl.handle.net/10468/13903
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Tyndall National Institute - Journal Articles
Copyright
© The Electrochemical Society. This is the Accepted Manuscript version of an article accepted for publication in ECS Transactions. The Electrochemical Society and IOP Publishing Ltd are not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1149/1.3206612