Spatial statistics for micro/nanoelectronics and materials science

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dc.contributor.authorMiranda, Enrique
dc.contributor.authorJiménez, D.
dc.contributor.authorSuñé, Jordi
dc.contributor.authorO'Connor, Éamon
dc.contributor.authorMonaghan, Scott
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorHurley, Paul K.
dc.contributor.funderMinisterio de Ciencia e Innovaciónen
dc.contributor.funderEuropean Regional Development Funden
dc.contributor.funderGeneralitat de Catalunyaen
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderInstitució Catalana de Recerca i Estudis Avançatsen
dc.date.accessioned2022-07-21T11:06:02Z
dc.date.available2022-07-21T11:06:02Z
dc.date.issued2012-06-25
dc.date.updated2022-07-19T20:58:39Z
dc.description.abstractSpatial statistics is a specialized branch of statistics aimed to provide information about the locations of randomly distributed objects in 1, 2 or 3 dimensions. The analysis involves data exploration, parameter estimation, model fitting and hypothesis formulation. In particular, in this work, we present some recent advances in the characterization of the spatial distribution of breakdown spots over the gate electrode of Metal-Insulator-Semiconductor and Metal-Insulator-Metal structures. The spots are regarded as a two-dimensional point pattern, which is analyzed using intensity plots, spatial counting methods, inter-event distance histograms and functional summary estimators. The methods reported here are general so that they can be applied to many different research fields.en
dc.description.sponsorshipMinisterio de Ciencia e Innovación (contract number TEC2009-09350); Generalitat de Catalunya (contract number 2009SGR783); Institució Catalana de Recerca i Estudis Avançats (ACADEMIA award)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationMiranda, E., Jiménez, D., Suñé, J., O'Connor, É., Monaghan, S., Cherkaoui, K., Hurley, P. K. (2012) 'Spatial statistics for micro/nanoelectronics and materials science', 2012 28th International Conference on Microelectronics Proceedings, Nis, Serbia, 13-16 May, pp. 23-30. doi: 10.1109/MIEL.2012.6222790en
dc.identifier.doi10.1109/MIEL.2012.6222790en
dc.identifier.endpage30en
dc.identifier.isbn978-1-4673-0238-8
dc.identifier.isbn978-1-4673-0237-1
dc.identifier.isbn978-1-4673-0236-4
dc.identifier.startpage23en
dc.identifier.urihttps://hdl.handle.net/10468/13387
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.ispartof2012 28th International Conference on Microelectronics, Nis, Serbia, 13-16 May
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/09/IN.1/I2633/IE/Investigating Emerging Non-Silicon Transistors (INVENT)/en
dc.rights© 2012, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectCorrelationen
dc.subjectLogic gatesen
dc.subjectSiliconen
dc.subjectHistogramsen
dc.subjectHafnium compoundsen
dc.subjectIndexesen
dc.titleSpatial statistics for micro/nanoelectronics and materials scienceen
dc.typeConference itemen
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