Investigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptions
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Published Version
Date
2025
Authors
Cherik, Iman Chahardah
Mohammadi, Saeed
Hurley, Paul K.
Ansari, Lida
Gity, Farzan
Journal Title
Journal ISSN
Volume Title
Publisher
Nature Research
Published Version
Abstract
In this paper, we examine the effects of subband quantization on the efficacy of an L-shaped gate vertical dopingless tunneling field-effect transistor. The proposed architecture leverages an intrinsic tunneling interface that is fully aligned with the gate metal, resulting in enhanced electrostatic control. We utilized a two-step numerical simulation approach grounded in the Schrödinger-Poisson equations to evaluate the performance of our proposed device and accurately calculate the ON-state current. Additionally, we assessed the influence of defects at the heterojunction on the performance of our device. Under quantum mechanical assumptions, parameters such as ION = 23.8 µA/µm, SSAVG = 12.03 mV/dec, and the ION/IOFF ratio = 4.88 × 1010 indicate that our structure is a promising candidate for high-performance applications.
Description
Keywords
Dopingless , Heterojunction , Quantum confinement , TFET , Trap-assisted tunneling
Citation
Cherik, I. C., Mohammadi, S., Hurley, P. K., Ansari, L. and Gity, F. (2025) 'Investigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptions', Scientific Reports, 15(1), p.4682. https://doi.org/10.1038/s41598-025-88281-0