Investigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptions

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dc.contributor.authorCherik, Iman Chahardahen
dc.contributor.authorMohammadi, Saeeden
dc.contributor.authorHurley, Paul K.en
dc.contributor.authorAnsari, Lidaen
dc.contributor.authorGity, Farzanen
dc.date.accessioned2025-04-15T11:44:01Z
dc.date.available2025-04-15T11:44:01Z
dc.date.issued2025en
dc.description.abstractIn this paper, we examine the effects of subband quantization on the efficacy of an L-shaped gate vertical dopingless tunneling field-effect transistor. The proposed architecture leverages an intrinsic tunneling interface that is fully aligned with the gate metal, resulting in enhanced electrostatic control. We utilized a two-step numerical simulation approach grounded in the Schrödinger-Poisson equations to evaluate the performance of our proposed device and accurately calculate the ON-state current. Additionally, we assessed the influence of defects at the heterojunction on the performance of our device. Under quantum mechanical assumptions, parameters such as ION = 23.8 µA/µm, SSAVG = 12.03 mV/dec, and the ION/IOFF ratio = 4.88 × 1010 indicate that our structure is a promising candidate for high-performance applications. en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid4682en
dc.identifier.citationCherik, I. C., Mohammadi, S., Hurley, P. K., Ansari, L. and Gity, F. (2025) 'Investigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptions', Scientific Reports, 15(1), p.4682. https://doi.org/10.1038/s41598-025-88281-0en
dc.identifier.doi10.1038/s41598-025-88281-0en
dc.identifier.issn20452322en
dc.identifier.issued1
dc.identifier.journaltitleScientific Reportsen
dc.identifier.urihttps://hdl.handle.net/10468/17264
dc.identifier.volume15
dc.language.isoenen
dc.publisherNature Researchen
dc.rights© 2025, the Author(s). Open Access.en
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subjectDopinglessen
dc.subjectHeterojunctionen
dc.subjectQuantum confinementen
dc.subjectTFETen
dc.subjectTrap-assisted tunnelingen
dc.titleInvestigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptionsen
dc.typeArticle (peer reviewed)en
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