III-V electro-absorption modulation and detection devices integrated to 220 nm silicon-on-insulator

Loading...
Thumbnail Image
Files
Date
2024-06-16
Authors
Moynihan, Owen
Ghosh, Samir
O’Callaghan, James
Roycroft, Brendan
Thomas, Kevin
Pelucchi, Emanuele
Corbett, Brian
Journal Title
Journal ISSN
Volume Title
Publisher
Springer Nature
Research Projects
Organizational Units
Journal Issue
Abstract
III-V indium phosphide (InP) ridge coupons capable of electro-absorption modulation and detection are integrated on a 220 nm silicon-on-insulator platform using transfer printing. The coupons employ a PIN structure design that can be actively biased to efficiently modulate and detect light with a bandwidth of >30 nm from 1550–1580 nm. Across the C-band, the grating coupled devices provide an extinction ratio (ER) of 25 dB and detect light with a responsivity of over 0.85 A/W, with an insertion loss (IL) at 0 V of 3.5 dB at 1580 nm and 6.5 dB at 1550 nm.
Description
Keywords
Heterogeneous integration , Micro-transfer printing , Electro-optic modulation , Photo-detection , Quantum-confined-Stark-effect (QCSE)
Citation
Moynihan, O., Ghosh, S., O’Callaghan, J., Roycroft, B., Thomas, K., Pelucchi, E. and Corbett, B. (2024) 'III-V electro-absorption modulation and detection devices integrated to 220 nm silicon-on-insulator', in: Witzens, J., Poon, J., Zimmermann, L., Freude, W. (eds.) 25th European Conference on Integrated Optics (ECIO 2024), June 17–19, Aachen, Germany. Springer Proceedings in Physics, vol 402, pp. 53-57. Springer, Cham. https://doi.org/10.1007/978-3-031-63378-2_10
Link to publisher’s version
Copyright
© 2023 The Authors, under exclusive license to Springer Nature Switzerland AG. This is a pre-print of the following paper: Moynihan, O., Ghosh, S., O’Callaghan, J., Roycroft, B., Thomas, K., Pelucchi, E. and Corbett, B. (2024) 'III-V electro-absorption modulation and detection devices integrated to 220 nm silicon-on-insulator', in: Witzens, J., Poon, J., Zimmermann, L., Freude, W. (eds.) 25th European Conference on Integrated Optics (ECIO 2024), June 17–19, Aachen, Germany. Springer Proceedings in Physics, vol 402, pp. 53-57. Springer, Cham. Reproduced with permission of the publisher. The final authenticated version is available online at: https://doi.org/10.1007/978-3-031-63378-2_10