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III-V electro-absorption modulation and detection devices integrated to 220 nm silicon-on-insulator
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Date
2024-06-16
Authors
Moynihan, Owen
Ghosh, Samir
O’Callaghan, James
Roycroft, Brendan
Thomas, Kevin
Pelucchi, Emanuele
Corbett, Brian
Journal Title
Journal ISSN
Volume Title
Publisher
Springer Nature
Published Version
Abstract
III-V indium phosphide (InP) ridge coupons capable of electro-absorption modulation and detection are integrated on a 220 nm silicon-on-insulator platform using transfer printing. The coupons employ a PIN structure design that can be actively biased to efficiently modulate and detect light with a bandwidth of >30 nm from 1550–1580 nm. Across the C-band, the grating coupled devices provide an extinction ratio (ER) of 25 dB and detect light with a responsivity of over 0.85 A/W, with an insertion loss (IL) at 0 V of 3.5 dB at 1580 nm and 6.5 dB at 1550 nm.
Description
Keywords
Heterogeneous integration , Micro-transfer printing , Electro-optic modulation , Photo-detection , Quantum-confined-Stark-effect (QCSE)
Citation
Moynihan, O., Ghosh, S., O’Callaghan, J., Roycroft, B., Thomas, K., Pelucchi, E. and Corbett, B. (2024) 'III-V electro-absorption modulation and detection devices integrated to 220 nm silicon-on-insulator', in: Witzens, J., Poon, J., Zimmermann, L., Freude, W. (eds.) 25th European Conference on Integrated Optics (ECIO 2024), June 17–19, Aachen, Germany. Springer Proceedings in Physics, vol 402, pp. 53-57. Springer, Cham. https://doi.org/10.1007/978-3-031-63378-2_10
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© 2023 The Authors, under exclusive license to Springer Nature Switzerland AG. This is a pre-print of the following paper: Moynihan, O., Ghosh, S., O’Callaghan, J., Roycroft, B., Thomas, K., Pelucchi, E. and Corbett, B. (2024) 'III-V electro-absorption modulation and detection devices integrated to 220 nm silicon-on-insulator', in: Witzens, J., Poon, J., Zimmermann, L., Freude, W. (eds.) 25th European Conference on Integrated Optics (ECIO 2024), June 17–19, Aachen, Germany. Springer Proceedings in Physics, vol 402, pp. 53-57. Springer, Cham. Reproduced with permission of the publisher. The final authenticated version is available online at: https://doi.org/10.1007/978-3-031-63378-2_10