III-V electro-absorption modulation and detection devices integrated to 220 nm silicon-on-insulator

Simple item page
dc.check.date2025-06-16en
dc.check.infoAccess to this article is restricted until 12 months after publication by request of the publisheren
dc.contributor.authorMoynihan, Owenen
dc.contributor.authorGhosh, Samiren
dc.contributor.authorO’Callaghan, Jamesen
dc.contributor.authorRoycroft, Brendanen
dc.contributor.authorThomas, Kevinen
dc.contributor.authorPelucchi, Emanueleen
dc.contributor.authorCorbett, Brianen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2024-07-29T15:27:50Z
dc.date.available2024-07-29T15:27:50Z
dc.date.issued2024-06-16en
dc.description.abstractIII-V indium phosphide (InP) ridge coupons capable of electro-absorption modulation and detection are integrated on a 220 nm silicon-on-insulator platform using transfer printing. The coupons employ a PIN structure design that can be actively biased to efficiently modulate and detect light with a bandwidth of >30 nm from 1550–1580 nm. Across the C-band, the grating coupled devices provide an extinction ratio (ER) of 25 dB and detect light with a responsivity of over 0.85 A/W, with an insertion loss (IL) at 0 V of 3.5 dB at 1580 nm and 6.5 dB at 1550 nm.en
dc.description.sponsorshipScience Foundation Ireland (12/RC/2276-P2)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationMoynihan, O., Ghosh, S., O’Callaghan, J., Roycroft, B., Thomas, K., Pelucchi, E. and Corbett, B. (2024) 'III-V electro-absorption modulation and detection devices integrated to 220 nm silicon-on-insulator', in: Witzens, J., Poon, J., Zimmermann, L., Freude, W. (eds.) 25th European Conference on Integrated Optics (ECIO 2024), June 17–19, Aachen, Germany. Springer Proceedings in Physics, vol 402, pp. 53-57. Springer, Cham. https://doi.org/10.1007/978-3-031-63378-2_10en
dc.identifier.doi10.1007/978-3-031-63378-2_10en
dc.identifier.eissn1867-4941en
dc.identifier.endpage57en
dc.identifier.isbn9783031633775en
dc.identifier.isbn9783031633782en
dc.identifier.issn0930-8989en
dc.identifier.journaltitleSpringer Proceedings in Physicsen
dc.identifier.startpage53en
dc.identifier.urihttps://hdl.handle.net/10468/16159
dc.identifier.volume402en
dc.language.isoenen
dc.publisherSpringer Natureen
dc.relation.ispartof25th European Conference on Integrated Optics (ECIO 2024), June 17–19, Aachen, Germany.en
dc.relation.ispartofSpringer Proceedings in Physicsen
dc.rights© 2023 The Authors, under exclusive license to Springer Nature Switzerland AG. This is a pre-print of the following paper: Moynihan, O., Ghosh, S., O’Callaghan, J., Roycroft, B., Thomas, K., Pelucchi, E. and Corbett, B. (2024) 'III-V electro-absorption modulation and detection devices integrated to 220 nm silicon-on-insulator', in: Witzens, J., Poon, J., Zimmermann, L., Freude, W. (eds.) 25th European Conference on Integrated Optics (ECIO 2024), June 17–19, Aachen, Germany. Springer Proceedings in Physics, vol 402, pp. 53-57. Springer, Cham. Reproduced with permission of the publisher. The final authenticated version is available online at: https://doi.org/10.1007/978-3-031-63378-2_10en
dc.subjectHeterogeneous integrationen
dc.subjectMicro-transfer printingen
dc.subjectElectro-optic modulationen
dc.subjectPhoto-detectionen
dc.subjectQuantum-confined-Stark-effect (QCSE)en
dc.titleIII-V electro-absorption modulation and detection devices integrated to 220 nm silicon-on-insulatoren
dc.typeBook chapteren
dc.typeConference itemen
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
ECIOabstract290224_OM.pdf
Size:
596.35 KB
Format:
Adobe Portable Document Format
Description:
Accepted Version
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
2.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Tyndall National Institute - Conference Items