Built-in field control in alloyed c-plane III-N quantum dots and wells

Thumbnail Image
Files
3090.pdf(2.01 MB)
Published Version
Date
2011
Authors
Caro, Miguel A.
Schulz, Stefan
Healy, S. B.
O'Reilly, Eoin P.
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
10.1063/1.3563568
Research Projects
Organizational Units
Journal Issue
Abstract
We investigate the degree to which the built-in electric field can be suppressed by employing polarization-matched barriers in III-N quantum well and dot structures grown along the c axis. Our results show that it is possible to take advantage of the opposite contributions to the built-in potential arising from the different possible combinations of wurtzite GaN, InN, and AlN when alloying the materials. We show that, for a fixed bandgap of the dot/well, optimal alloy compositions can be found that minimize the built-in field across the structure. We discuss and study the impact of different material parameters on the results, including the influence of nonlinear effects in the piezoelectric polarization. Structures grown with unstrained barriers and on GaN epilayers are considered, including discussion of the effects of constraints such as strain limits and alloy miscibility. (C) 2011 American Institute of Physics. [doi:10.1063/1.3563568]
Description
Keywords
Quantum dots , Quantum wells , Band gap , III-V semiconductors , Polarization
Citation
Caro, M. A., Schulz, S., Healy, S. B. and O’Reilly, E. P. (2011) 'Built-in field control in alloyed c-plane III-N quantum dots and wells', Journal of Applied Physics, 109(8), 084110 (10pp). doi: 10.1063/1.3563568
Link to publisher’s version
http://aip.scitation.org/doi/10.1063/1.3563568
URI
https://hdl.handle.net/10468/4739
Collections
Tyndall National Institute - Journal Articles
Physics - Journal Articles
Copyright
© 2011, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Caro, M. A., Schulz, S., Healy, S. B. and O’Reilly, E. P. (2011) 'Built-in field control in alloyed c-plane III-N quantum dots and wells', Journal of Applied Physics, 109(8), 084110 (10pp). doi: 10.1063/1.3563568 and may be found at http://aip.scitation.org/doi/10.1063/1.3563568