Built-in field control in alloyed c-plane III-N quantum dots and wells

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dc.contributor.authorCaro, Miguel A.
dc.contributor.authorSchulz, Stefan
dc.contributor.authorHealy, S. B.
dc.contributor.authorO'Reilly, Eoin P.
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderIrish Research Council for Science, Engineering and Technology
dc.date.accessioned2017-09-20T10:06:34Z
dc.date.available2017-09-20T10:06:34Z
dc.date.issued2011
dc.description.abstractWe investigate the degree to which the built-in electric field can be suppressed by employing polarization-matched barriers in III-N quantum well and dot structures grown along the c axis. Our results show that it is possible to take advantage of the opposite contributions to the built-in potential arising from the different possible combinations of wurtzite GaN, InN, and AlN when alloying the materials. We show that, for a fixed bandgap of the dot/well, optimal alloy compositions can be found that minimize the built-in field across the structure. We discuss and study the impact of different material parameters on the results, including the influence of nonlinear effects in the piezoelectric polarization. Structures grown with unstrained barriers and on GaN epilayers are considered, including discussion of the effects of constraints such as strain limits and alloy miscibility. (C) 2011 American Institute of Physics. [doi:10.1063/1.3563568]en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid84110
dc.identifier.citationCaro, M. A., Schulz, S., Healy, S. B. and O’Reilly, E. P. (2011) 'Built-in field control in alloyed c-plane III-N quantum dots and wells', Journal of Applied Physics, 109(8), 084110 (10pp). doi: 10.1063/1.3563568en
dc.identifier.doi10.1063/1.3563568
dc.identifier.endpage10
dc.identifier.issn0021-8979
dc.identifier.issued8
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4739
dc.identifier.volume109
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/10.1063/1.3563568
dc.rights© 2011, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Caro, M. A., Schulz, S., Healy, S. B. and O’Reilly, E. P. (2011) 'Built-in field control in alloyed c-plane III-N quantum dots and wells', Journal of Applied Physics, 109(8), 084110 (10pp). doi: 10.1063/1.3563568 and may be found at http://aip.scitation.org/doi/10.1063/1.3563568en
dc.subjectQuantum dotsen
dc.subjectQuantum wellsen
dc.subjectBand gapen
dc.subjectIII-V semiconductorsen
dc.subjectPolarizationen
dc.titleBuilt-in field control in alloyed c-plane III-N quantum dots and wellsen
dc.typeArticle (peer-reviewed)en
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