Post-breakdown conduction in metal gate/MgO/InP structures

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dc.contributor.authorMiranda, Enrique
dc.contributor.authorO'Connor, Éamon
dc.contributor.authorHughes, Gregory
dc.contributor.authorCasey, P.
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorMonaghan, Scott
dc.contributor.authorLong, Rathnait D.
dc.contributor.authorO'Connell, Dan
dc.contributor.authorHurley, Paul K.
dc.contributor.funderGeneralitat de Catalunyaen
dc.contributor.funderMinisterio de Ciencia y Tecnologíaen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2022-07-21T13:44:11Z
dc.date.available2022-07-21T13:44:11Z
dc.date.issued2009-09-04
dc.date.updated2022-07-19T21:16:10Z
dc.description.abstractThe electrical behavior of broken down thin films of magnesium oxide (MgO) grown on indium phosphide (InP) substrates was investigated. To our knowledge, this is the first report that identifies the Soft Break Down (SBD) conduction mode in a metal gate/high-kappa/III-V semiconductor structure. It is shown that the leakage current associated with this failure mode follows the power-law model I=aVb for both injection polarities in a voltage range that largely exceeds the one reported for SiO2. We also show that the Hard Break Down (HBD) current is remarkably high, involving significant thermal effects that are believed to be at the origin of the switching behavior exhibited by the I-V characteristics.en
dc.description.sponsorshipGeneralitat de Catalunya (BE-2007); Ministerio de Ciencia y Tecnología (project number TEC2006–13731-C02–01); Science Foundation Ireland (Walton Awards scheme 07/w.l/I1828; 05/IN/1751; National Access Program at the Tyndall National Institute)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationMiranda, E., O'Connor, E., Hughes, G., Casey, P., Cherkaoui, K., Monaghan, S., Long, R., O'Connell, D. and Hurley, P. K. (2009) 'Post-breakdown conduction in metal gate/MgO/InP structures', 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, Suzhou, China, 6-10 July, pp. 71-74. doi: 10.1109/IPFA.2009.5232695en
dc.identifier.doi10.1109/IPFA.2009.5232695en
dc.identifier.eissn1946-1550
dc.identifier.endpage74en
dc.identifier.isbn978-1-4244-3911-9
dc.identifier.isbn978-1-4244-3912-6
dc.identifier.issn1946-1542
dc.identifier.startpage71en
dc.identifier.urihttps://hdl.handle.net/10468/13390
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.ispartof2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, Suzhou, China, 6-10 July
dc.rights© 2009, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectIndium phosphideen
dc.subjectDielectric substratesen
dc.subjectThermal conductivityen
dc.subjectLeakage currenten
dc.subjectConducting materialsen
dc.subjectDielectric materialsen
dc.subjectSemiconductor filmsen
dc.subjectBreakdown voltageen
dc.subjectDielectric breakdownen
dc.subjectSemiconductor thin filmsen
dc.titlePost-breakdown conduction in metal gate/MgO/InP structuresen
dc.typeConference itemen
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