Heterodimensional FET with split drain

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dc.contributor.authorChang, Tongwei
dc.contributor.authorMathewson, Alan
dc.contributor.authorKennedy, Michael Peter
dc.contributor.authorGreer, James C.
dc.date.accessioned2010-04-07T11:56:57Z
dc.date.available2010-04-07T11:56:57Z
dc.date.issued2004-11
dc.date.updated2010-03-26T14:05:07Z
dc.description.abstractA modification to heterodimensional field effect transistors (HDFET) is introduced and demonstrated to provide novel switching capabilities. The modification consists of introducing a split drain into the HDFET structure allowing the transistor to operate as a single pole-double throw switch. By extension, multiple pole-multiple throw switches can be made within a single transistor structure by introduction of multiple split drains or sources. If the device is fabricated on silicon germanium substrates, compatibility of the structure with conventional CMOS processing is achievable, allowing for new applications in digital, mixed signal, and high voltage switching.en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationChang, T., Mathewson, A., Kennedy, M.P., Greer, J.C., 2004. Heterodimensional FET with split drain. IEEE Electron Device Letters, 25(11), pp.737-739.en
dc.identifier.doi10.1109/LED.2004.837583
dc.identifier.endpage739en
dc.identifier.issn0741-3106
dc.identifier.issued11en
dc.identifier.journaltitleIEEE Electron Device Lettersen
dc.identifier.startpage737en
dc.identifier.urihttps://hdl.handle.net/10468/144
dc.identifier.volume25en
dc.language.isoenen
dc.publisherIEEEen
dc.rights©2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en
dc.subjectHeterodimensional field-effect transistoren
dc.subjectSemiconductor relayen
dc.subjectSilicon germaniumen
dc.subjectHDFETen
dc.subject.lcshField-effect transistorsen
dc.subject.lcshGermanium alloysen
dc.subject.lcshSilicon alloysen
dc.subject.lcshSemiconductorsen
dc.titleHeterodimensional FET with split drainen
dc.typeArticle (peer-reviewed)en
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