Hall-effect mobility for a selection of natural and synthetic 2D semiconductor crystals

Simple item page
dc.contributor.authorMonaghan, Scott
dc.contributor.authorGity, Farzan
dc.contributor.authorDuffy, Ray
dc.contributor.authorMirabelli, Gioele
dc.contributor.authorMcCarthy, Melissa
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorPovey, Ian M.
dc.contributor.authorNagle, Roger E.
dc.contributor.authorHurley, Paul K.
dc.contributor.authorLindemuth, Jeffrey R.
dc.contributor.authorNapolitani, Enrico
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderHigher Education Authorityen
dc.date.accessioned2022-06-22T11:14:00Z
dc.date.available2022-06-22T11:14:00Z
dc.date.issued2017-07-03
dc.date.updated2022-06-20T09:31:52Z
dc.description.abstractWe present a DC-AC Hall-effect analysis on transition-metal-dichalcogenides comprising natural crystals of molybdenum disulfide and tungsten diselenide; and synthetic crystals of hafnium diselenide, molybdenum ditelluride, molybdenum diselenide and niobium-doped molybdenum disulfide. We observe a wide range of Hall mobility and carrier concentration values with either a net electron or hole carrier type. The synthetic niobium-doped molybdenum disulfide crystal exhibits a net hole carrier type and a carrier concentration approximately two orders of magnitude higher than a non-intentionally doped natural molybdenum disulfide crystal, with an equivalent reduction in Hall mobility. This synthetic niobium-doped molybdenum disulfide crystal also shows a significantly reduced resistivity when compared to the other crystals. Secondary ion mass spectrometry shows higher counts of niobium in the intentionally-doped synthetic niobium-molybdenum disulfide crystal, in addition to various other high contamination counts in both the natural and synthetic molybdenum disulfide crystals, correlating well with the significant range of high resistivity observed. Compared to silicon, the resistivity in these contaminated TMD materials reduces less rapidly with increasing equivalent carrier concentration levels, and the resistivity is higher in magnitude by a factor of approximately 4-10 when compared to silicon, which in turn reduces the achievable Hall mobility by at least a similar factor. It is therefore suggested that more controlled growth methods of TMD materials which lead to significantly reduced contamination elements and levels, with improved stoichiometry, could potentially provide a significant increase in Hall mobility assuming no change in carrier properties.en
dc.description.sponsorshipHigher Education Authority (5th PRTLI program)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationMonaghan, S., Gity, F., Duffy, R., Mirabelli, G., McCarthy, M., Cherkaoui, K., Povey, I. M. Nagle, R. E., Hurley, P. K., Lindemuth, J. R. and Napolitani, E. (2017) ‘Hall-effect mobility for a selection of natural synthetic 2D semiconductor crystals’, 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Athens, Greece, 3-5 April, pp. 27-30. doi: 10.1109/ULIS.2017.7962592en
dc.identifier.doi10.1109/ULIS.2017.7962592en
dc.identifier.eissn2472-9132
dc.identifier.endpage30en
dc.identifier.isbn978-1-5090-5314-8
dc.identifier.isbn978-1-5090-5313-1
dc.identifier.startpage27en
dc.identifier.urihttps://hdl.handle.net/10468/13308
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.ispartof2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Athens, Greece, 3-5 April
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI US Ireland R&D Partnership/13/US/I2862/IE/Understanding the Nature of Interfaces in Two Dimensional Electronic Devises (UNITE)/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Infrastructural Support/04/CE/I590a7/IE/Tyndall National Institute: National Access Programme (Year 7)/en
dc.relation.urihttp://eurosoi-ulis2017.inn.demokritos.gr/
dc.rights© 2017, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectDC Hallen
dc.subjectAC Hallen
dc.subject2D materialsen
dc.subjectTransitionmetal-dichalcogenidesen
dc.subjectTMDsen
dc.subjectCrystalsen
dc.subjectTransition metalsen
dc.subjectChalcogensen
dc.subjectResistivityen
dc.subjectMobilityen
dc.subjectSemiconductoren
dc.subjectSecondary ion mass spectrometry (SIMS)en
dc.titleHall-effect mobility for a selection of natural and synthetic 2D semiconductor crystalsen
dc.typeConference itemen
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
4page-final-sub-SM-Hall-2D-ULIS-EUROSOI 2017.pdf
Size:
491.79 KB
Format:
Adobe Portable Document Format
Description:
Accepted Version
Download
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
2.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Tyndall National Institute - Conference Items