• Design of 3.3 and 4.2 μm mid-infrared metamorphic quantum well light-emitting diodes 

  Arkani, Reza; Broderick, Christopher A.; O'Reilly, Eoin P. (Institute of Electrical and Electronics Engineers (IEEE), 2018-12-13)

  The use of Al z In 1-z As metamorphic buffer layers to facilitate the growth of lattice-mismatched InN y (As 1-x Sb x ) 1-y quantum wells on GaAs or InAs substrates has recently been demonstrated to constitute an attractive ...
• Behavioral modeling of SAR ADCs in Simulink 

  Molina Salgado, Gerardo; Dicataldo, Alberto; O'Hare, Daniel; O'Connell, Ivan; de la Rosa, José M. (Institute of Electrical and Electronics Engineers (IEEE), 2018-05-04)

  This paper presents a toolbox for the behavioral simulation of SAR ADCs in Simulink®. The models include the most limiting circuit effects such as sampled thermal noise, capacitor mismatch, finite settling, comparator noise ...
• Optimized consumer-centric demand response 

  Tzanidakis, T.; Malavazos, C.; Tsatsakis, K.; Papanikolaou, A.; Tsitsanis, T.; O'Flynn, Brendan (Institute of Electrical and Electronics Engineers (IEEE), 2018-06)

  Demand side management has focused more on centralized control and heavily depends on continuous consumer interaction, often overlooking consumer thermal and visual comfort. Distribution grid management will necessitate ...
• Nitride single photon sources 

  Zhu, T.; Jarman, J. C.; Ren, Christopher X.; Tang, Fengzai; Kocher, C. C.; Puchtler, T. J.; Reid, Benjamin P. L.; Wang, T.; Patra, Saroj K.; Schulz, Stefan; Taylor, Robert A.; Oliver, R. A. (Institute of Electrical and Electronics Engineers (IEEE), 2018-11-08)

  Single photon sources are a key enabling technology for quantum communications, and in the future more advanced quantum light sources may underpin other quantum information processing paradigms such as linear optical quantum ...
• Monolayer doping and other strategies in high surface-to-volume ratio silicon devices 

  Duffy, Ray; Kennedy, Noel; Mirabelli, Gioele; Galluccio, Emmanuele; Hurley, Paul K.; Holmes, Justin D.; Long, Brenda (Institute of Electrical and Electronics Engineers (IEEE), 2018-03)

  To maintain electron device scaling, in recent years the semiconductor industry has been forced to move from planar to non-planar thin-body electron device architectures. This alone has created the need to develop a radically ...

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