• IMPAQT Miniaturized Underwater Acoustic Telemetry Platform: Transmitter Node System Design 

  Jafarzadeh, Hamed; Belcastro, Marco; O'Flynn, Brendan (ThinkMind (TM), 2020-11-21)

  The marine environment and its natural resources are an essential part of the geographical ecosystem and a great food source for humans. In recent years, terrestrial wireless sensor networks and Internet of Things (IoT) ...
• Electronic structure of lonsdaleite SixGe1−x alloys 

  Broderick, Christopher A. (Institute of Electrical and Electronics Engineers (IEEE), 2020-10-08)

  Conventional diamond-structured silicon (Si) and germanium (Ge) possess indirect fundamental band gaps, limiting their potential for applications in light-emitting devices. However, SixGe1-x alloys grown in the lonsdaleite ...
• Silicon photonic 2.5D integrated multi-chip module receiver 

  Abrams, Nathan C.; Cheng, Qixiang; Glick, Madeleine; Jezzini, Moises; Morrissey, Padraic; O'Brien, Peter; Bergman, Keren (Institute of Electrical and Electronics Engineers (IEEE), 2020-09-10)

  We demonstrate the first 2.5D integrated, wavelength division multiplexing, silicon photonic receiver. The multi-chip module utilizes a silicon interposer to integrate the four-channel photonic cascaded microdisk receiver ...
• Mutually injection locked gain switched optical frequency combs for dual comb spectroscopy of H2S 

  Martin, Eamonn P.; Chandran, Satheesh; Rosado, Alejandro; Soderholm, Erik P.; Alexander, Justin K.; Peters, Frank H.; Ruth, Albert A.; Anandarajah, Prince M. (Optical Society of America, 2020-05)

  Application of two mutually injection-locked gain-switched optical frequency combs for near-infrared spectroscopy of H2S in air is demonstrated. The high phase correlation between OFCs allows measurement sensitivities of ...
• Multi-scale theory and simulation of direct-gap group-IV semiconductor alloys 

  Broderick, Christopher A.; O'Halloran, Edmond J.; Dunne, Michael D.; Kirwan, Amy C.; Andreev, Aleksey D.; Schulz, Stefan; O'Reilly, Eoin P. (Institute of Electrical and Electronics Engineers (IEEE), 2020-07-13)

  Alloying of Ge with other group-IV elements - C, Sn or Pb - represents a promising route to realise direct-gap group-IV semiconductors for applications in Si-compatible devices, including light-emitting diodes and lasers, ...

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