Influence of free radical surface activation on Si/SiC heterogeneous integration by direct wafer bonding
Torchia, Pasqualino; Pampili, Pietro; O'Connell, John; O'Brien, Joe; White, Mary; Schmidt, Michael; Sheehan, Brendan; Waldron, Finbarr; Holmes, Justin D.; Monaghan, Scott; Duffy, Ray; Trajkovic, T.; Kilchytska, V.; Gammon, P. M.; Cherkaoui, Karim; Hurley, Paul K.; Gity, Farzan
Date:
2017
Copyright:
© 2017, the Authors. All rights reserved.
Citation:
Torchia, P., Pampili, P., O'Connell, J., O'Brien, J., White, M., Schmidt, M., Sheehan, B., Waldron, F., Holmes, J. D., Monaghan, S., Duffy, R., Trajkovic, T., Kilchytska, V., Gammon, P., Cherkaoui, K., Hurley, P. K. and Gity, F.(2017) 'Influence of free radical surface activation on Si/SiC heterogeneous integration by direct wafer bonding', 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (ULIS), Athens, Greece, 3-5 April.
Abstract:
In this study, a surface activated bonding method using remote plasma is applied to realize the direct wafer bonding of Si and SiC. A comparison of different surface treatments is reported. Hydrophilic and hydrophobic wafers have been exposed to in-situ argon and nitrogen radicals generated by remote plasma for surface activation before bonding. A comparison of the bonding yield and surface condition has been conducted and analyzed as a function of the surface treatments. It has been shown that N2 plasma leads to the highest yield of > 97 %, strongest bond of > 360 N and interfacial layer (IL) thickness of ~1.5 nm.
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