Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks
Caruso, Enrico; Lin, Jun; Burke, K. F.; Cherkaoui, Karim; Esseni, David; Gity, Farzan; Monaghan, Scott; Palestri, Pierpaolo; Hurley, Paul K.; Selmi, Luca
Date:
2018-05-07
Copyright:
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Citation:
Caruso, E., Lin, J., Burke, K. F.; Cherkaoui, K., Esseni, D., Gity, F., Monaghan, S., Palestri, P., Hurley, P. K. and Selmi, L. (2018) 'Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks', Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain, 19-21 March. doi:10.1109/ULIS.2018.8354757
Abstract:
This paper reports physics based TCAD simulations of multi-frequency C-V curves of In0.53Ga0.47As MOSCAPs including the AC response of the border traps. The calculations reproduce the experimental inversion and accumulation capacitance versus frequency, and provide a means to profile the space and energy density of states of border traps. A sensitivity analysis of the results to border traps' distribution is carried out changing the trap volume and the oxide capacitance.
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