Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks
Caruso, Enrico; Lin, Jun; Burke, K. F.; Cherkaoui, Karim; Esseni, D.; Gity, Farzan; Monaghan, Scott; Palestri, P.; Hurley, Paul K.; Selmi, L.
Date:
2018-05-07
Copyright:
© 2018, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Citation:
Caruso, E., Lin, J., Burke, K. F.; Cherkaoui, K., Esseni, D., Gity, F., Monaghan, S., Palestri, P., Hurley, P. K. and Selmi, L. (2018) 'Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks', Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain, 19-21 March. doi:10.1109/ULIS.2018.8354757
Abstract:
This paper reports physics based TCAD simulations of multi-frequency C-V curves of In0.53Ga0.47As MOSCAPs including the AC response of the border traps. The calculations reproduce the experimental inversion and accumulation capacitance versus frequency, and provide a means to profile the space and energy density of states of border traps. A sensitivity analysis of the results to border traps' distribution is carried out changing the trap volume and the oxide capacitance.
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