Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks

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dc.contributor.authorCaruso, Enrico
dc.contributor.authorLin, Jun
dc.contributor.authorBurke, K. F.
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorEsseni, David
dc.contributor.authorGity, Farzan
dc.contributor.authorMonaghan, Scott
dc.contributor.authorPalestri, Pierpaolo
dc.contributor.authorHurley, Paul K.
dc.contributor.authorSelmi, Luca
dc.contributor.funderSeventh Framework Programmeen
dc.contributor.funderHorizon 2020en
dc.date.accessioned2018-11-30T12:43:20Z
dc.date.available2018-11-30T12:43:20Z
dc.date.issued2018-05-07
dc.date.updated2018-11-30T12:34:22Z
dc.description.abstractThis paper reports physics based TCAD simulations of multi-frequency C-V curves of In0.53Ga0.47As MOSCAPs including the AC response of the border traps. The calculations reproduce the experimental inversion and accumulation capacitance versus frequency, and provide a means to profile the space and energy density of states of border traps. A sensitivity analysis of the results to border traps' distribution is carried out changing the trap volume and the oxide capacitance.en
dc.description.statusNot peer revieweden
dc.description.urihttps://congresos.ugr.es/eurosoi-ulis2018/en
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationCaruso, E., Lin, J., Burke, K. F.; Cherkaoui, K., Esseni, D., Gity, F., Monaghan, S., Palestri, P., Hurley, P. K. and Selmi, L. (2018) 'Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks', Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain, 19-21 March. doi:10.1109/ULIS.2018.8354757en
dc.identifier.doi10.1109/ULIS.2018.8354757
dc.identifier.endpage4en
dc.identifier.issn2472-9132
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/7161
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.ispartofJoint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) 2018
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/619326/EU/Technology CAD for III-V Semiconductor-based MOSFETs/III-V-MOSen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/688784/EU/Integration of III-V Nanowire Semiconductors for next Generation High Performance CMOS SOC Technologies/INSIGHTen
dc.rights© 2018, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectCapacitanceen
dc.subjectElectron trapsen
dc.subjectGallium arsenideen
dc.subjectHole trapsen
dc.subjectIII-V semiconductorsen
dc.subjectIndium compoundsen
dc.subjectInterface statesen
dc.subjectMOS capacitorsen
dc.subjectTechnology CADen
dc.subjectMultifrequency CV-curvesen
dc.subjectTCAD simulationsen
dc.subjectSensitivity analysisen
dc.subjectBorder trap profilingen
dc.subjectCapacitance-voltage curvesen
dc.subjectMOSCAPen
dc.subjectDensity of statesen
dc.subjectOxide capacitanceen
dc.subjectAl2O3/InGaAs stacksen
dc.subjectCapacitance-voltage characteristicsen
dc.subjectDielectricsen
dc.subjectAnalytical modelsen
dc.subjectMathematical modelen
dc.subjectDielectric measurementen
dc.subjectDispersionen
dc.subjectIII-V compoundsen
dc.subjectTCAD simulationen
dc.subjectBorder trapsen
dc.subjectParameter extractionen
dc.subjectC-Ven
dc.subjectTrap volumeen
dc.titleProfiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacksen
dc.typeConference itemen
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