Relationship between capacitance and conductance in MOS capacitors
Caruso, Enrico; Lin, Jun; Monaghan, Scott; Cherkaoui, Karim; Floyd, Liam; Gity, Farzan; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; Hurley, Paul K.
Date:
2019-09
Copyright:
© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Citation:
Caruso, E., Lin, J., Monaghan, S., Cherkaoui, K., Floyd, L., Gity, F., Palestri, P., Esseni, D., Selmi, L. and Hurley, P. K. (2019) 'Relationship between capacitance and conductance in MOS capacitors', 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, 4-6 Sept. 2019, (4 pp). doi: 10.1109/SISPAD.2019.8870553
Abstract:
In this work, we describe how the frequency dependence of conductance (G) and capacitance (C) of a generic MOS capacitor results in peaks of the functions G/ω and -ωdC/dω. By means of TCAD simulations, we show that G/ω and -ωdC/dω peak at the same value and at the same frequency for every bias point from accumulation to inversion. We illustrate how the properties of the peaks change with the semiconductor doping (ND), oxide capacitance (COX), minority carrier lifetime (τg), interface defect parameters (NIT, σ) and majority carrier dielectric relaxation time (τr). Finally, we demonstrate how these insights on G/ω and -ωdC/dω can be used to extract COX, ND and τg from InGaAs MOSCAP measurements.
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