Relationship between capacitance and conductance in MOS capacitors
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Accepted version
Date
2019-09
Authors
Caruso, Enrico
Lin, Jun
Monaghan, Scott
Cherkaoui, Karim
Floyd, Liam
Gity, Farzan
Palestri, Pierpaolo
Esseni, David
Selmi, Luca
Hurley, Paul K.
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published Version
Abstract
In this work, we describe how the frequency dependence of conductance (G) and capacitance (C) of a generic MOS capacitor results in peaks of the functions G/ω and -ωdC/dω. By means of TCAD simulations, we show that G/ω and -ωdC/dω peak at the same value and at the same frequency for every bias point from accumulation to inversion. We illustrate how the properties of the peaks change with the semiconductor doping (ND), oxide capacitance (COX), minority carrier lifetime (τg), interface defect parameters (NIT, σ) and majority carrier dielectric relaxation time (τr). Finally, we demonstrate how these insights on G/ω and -ωdC/dω can be used to extract COX, ND and τg from InGaAs MOSCAP measurements.
Description
Keywords
Capacitance , MOS capacitors , Indium gallium arsenide , Semiconductor device measurement , Frequency modulation , Capacitance-voltage characteristics , Frequency measurement , Characterization , extraction technique , MOS , multi-frequency , C-V , G-V , Minority carrier lifetime , Oxide capacitance , Doping
Citation
Caruso, E., Lin, J., Monaghan, S., Cherkaoui, K., Floyd, L., Gity, F., Palestri, P., Esseni, D., Selmi, L. and Hurley, P. K. (2019) 'Relationship between capacitance and conductance in MOS capacitors', 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, 4-6 Sept. 2019, (4 pp). doi: 10.1109/SISPAD.2019.8870553
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