Low-voltage phase shifters based on HfxZr1-xO2 ferroelectrics integrated with phased antenna arrays
Povey, Ian M.
Institute of Electrical and Electronics Engineers, IEEE
In this paper, we present the design, fabrication and microwave experimental characterisation of a ferroelectric phase shifter, which is integrated with a 2-element antenna array to achieve beam-steering capabilities at very low voltages of ±1 V. The phase shifter consists of an interdigitated metallic capacitor deposited on a Zr-doped ferroelectric hafnium dioxide (Hf x Zr 1-x O 2 ) thin film, directly grown on high-resistivity Silicon (HR Si). The phase shifter shows a maximum phase shift of 53.74° at 2.55 GHz, sweeping the DC voltage between -1 V and +1 V. The miniaturised phased array is in the form of two gold patch antennas, phase shifters and additional circuitry, all integrated on HfxZr 1-x O 2 /HR Si 4-inch wafer. The radiation beam at 2.55 GHz is steered with 25° when the 7-nm-thick ferroelectric is biased with ±1 V. These new microwave devices represent a step forward in the realisation of low-voltage tunable microwave components for the upcoming 5G technology.
Ferroelectric films , Phased arrays , Thin film devices
Dragoman, M., Aldrigo, M., Iordanescu, S., Modreanu, M., Povey, I., Vasilache, D., Dinescu, A. and Romanitan, C. (2018) 'Low-Voltage Phase Shifters Based on HfxZr1-xO2 Ferroelectrics Integrated with Phased Antenna Arrays', 48th European Microwave Conference (EuMC), Madrid, Spain 23-27 Sept. pp. 950-953. doi: 10.23919/EuMC.2018.8541592
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