Low-voltage phase shifters based on HfxZr1-xO2 ferroelectrics integrated with phased antenna arrays

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dc.contributor.authorDragoman, Mircea
dc.contributor.authorAldrigo, Martino
dc.contributor.authorIordanescu, Sergiu
dc.contributor.authorModreanu, Mircea
dc.contributor.authorPovey, Ian M.
dc.contributor.authorVasilache, Dan
dc.contributor.authorDinescu, Adrian
dc.contributor.authorRomanitan, Cosmin
dc.date.accessioned2021-04-26T10:10:25Z
dc.date.available2021-04-26T10:10:25Z
dc.date.issued2018-09
dc.date.updated2021-04-26T09:59:48Z
dc.description.abstractIn this paper, we present the design, fabrication and microwave experimental characterisation of a ferroelectric phase shifter, which is integrated with a 2-element antenna array to achieve beam-steering capabilities at very low voltages of ±1 V. The phase shifter consists of an interdigitated metallic capacitor deposited on a Zr-doped ferroelectric hafnium dioxide (Hf x Zr 1-x O 2 ) thin film, directly grown on high-resistivity Silicon (HR Si). The phase shifter shows a maximum phase shift of 53.74° at 2.55 GHz, sweeping the DC voltage between -1 V and +1 V. The miniaturised phased array is in the form of two gold patch antennas, phase shifters and additional circuitry, all integrated on HfxZr 1-x O 2 /HR Si 4-inch wafer. The radiation beam at 2.55 GHz is steered with 25° when the 7-nm-thick ferroelectric is biased with ±1 V. These new microwave devices represent a step forward in the realisation of low-voltage tunable microwave components for the upcoming 5G technology.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationDragoman, M., Aldrigo, M., Iordanescu, S., Modreanu, M., Povey, I., Vasilache, D., Dinescu, A. and Romanitan, C. (2018) 'Low-Voltage Phase Shifters Based on HfxZr1-xO2 Ferroelectrics Integrated with Phased Antenna Arrays', 48th European Microwave Conference (EuMC), Madrid, Spain 23-27 Sept. pp. 950-953. doi: 10.23919/EuMC.2018.8541592en
dc.identifier.doi10.23919/EuMC.2018.8541592en
dc.identifier.endpage953en
dc.identifier.isbn978-2-87487-051-4
dc.identifier.startpage950en
dc.identifier.urihttps://hdl.handle.net/10468/11221
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers, IEEEen
dc.relation.urihttps://ieeexplore.ieee.org/document/8541592
dc.rights© 2018, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other worksen
dc.subjectFerroelectric filmsen
dc.subjectPhased arraysen
dc.subjectThin film devicesen
dc.titleLow-voltage phase shifters based on HfxZr1-xO2 ferroelectrics integrated with phased antenna arraysen
dc.typeConference itemen
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