Orientation-engineered PtTe2 Schottky FETs: Quantum transport insights for dopant-free advanced technology nodes
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Date
2026-07-03
Authors
Ansari, Lida
Hurley, Paul K.
Gity, Farzan
Journal Title
Journal ISSN
Volume Title
Publisher
John Wiley and Sons Inc
Published Version
Abstract
As transistor scaling pushes beyond the 5 nm node, conventional silicon-based field effect transistors (FETs) face critical challenges including short-channel effects, high contact resistance, and power dissipation. This work presents a comprehensive quantum transport simulation study of monomaterial Schottky-junction FETs based on monolayer PtTe2, leveraging its unique thickness-dependent electronic properties – where the semimetallic bilayer serves as the source/drain and the semiconducting monolayer forms the channel. First-principles simulations reveal that the device architecture enables efficient, doping-free carrier injection, sharp electrostatic switching, and directional performance tunability. The results show that transport along the Γ–M orientation achieves superior ON-state current, subthreshold swing (as low as 75 mV/dec), and suppressed OFF-state current, with OFF-currents and subthreshold swings comparable to IRDS-style low-power projections for sub-10 nm logic nodes. Projected local density of states (PLDoS) and energy-resolved current spectra further reveal distinct transport regimes and efficient Schottky barrier modulation. Compared to contemporary 2D-channel transistors, the monomaterial PtTe2 Schottky FET offers a balanced trade-off between scalability, simplicity, carrier injection, and low-power operation. These findings highlight monolayer PtTe2 as a promising candidate for ultra-scaled logic applications and demonstrate the strategic advantages of monomaterial, orientation-engineered architectures for beyond-CMOS nanoelectronics.
Description
Keywords
Density functional theory , PtTe , Quantum transport simulations , Schottky field-effect transistors , Semimetals , Transition metal dichalcogenides , Two-dimensional materials , [TyndallMicroNano]
Citation
Ansari, L, Hurley, P K & Gity, F 2026, 'Orientation-engineered PtTe 2 Schottky FETs: Quantum transport insights for dopant-free advanced technology nodes', Advanced Electronic Materials, vol. 12, no. 16, e70464, pp. 1-10. https://doi.org/10.1002/aelm.70464