Orientation-engineered PtTe2 Schottky FETs: Quantum transport insights for dopant-free advanced technology nodes
| dc.contributor.author | Ansari, Lida | |
| dc.contributor.author | Hurley, Paul K. | |
| dc.contributor.author | Gity, Farzan | |
| dc.contributor.funder | Research Ireland, 24/FFP‐A/13329-SFI‐12/RC/2278_P2 | |
| dc.date.accessioned | 2026-07-15T10:50:06Z | |
| dc.date.available | 2026-07-15T10:50:06Z | |
| dc.date.issued | 2026-07-03 | |
| dc.description.abstract | As transistor scaling pushes beyond the 5 nm node, conventional silicon-based field effect transistors (FETs) face critical challenges including short-channel effects, high contact resistance, and power dissipation. This work presents a comprehensive quantum transport simulation study of monomaterial Schottky-junction FETs based on monolayer PtTe2, leveraging its unique thickness-dependent electronic properties – where the semimetallic bilayer serves as the source/drain and the semiconducting monolayer forms the channel. First-principles simulations reveal that the device architecture enables efficient, doping-free carrier injection, sharp electrostatic switching, and directional performance tunability. The results show that transport along the Γ–M orientation achieves superior ON-state current, subthreshold swing (as low as 75 mV/dec), and suppressed OFF-state current, with OFF-currents and subthreshold swings comparable to IRDS-style low-power projections for sub-10 nm logic nodes. Projected local density of states (PLDoS) and energy-resolved current spectra further reveal distinct transport regimes and efficient Schottky barrier modulation. Compared to contemporary 2D-channel transistors, the monomaterial PtTe2 Schottky FET offers a balanced trade-off between scalability, simplicity, carrier injection, and low-power operation. These findings highlight monolayer PtTe2 as a promising candidate for ultra-scaled logic applications and demonstrate the strategic advantages of monomaterial, orientation-engineered architectures for beyond-CMOS nanoelectronics. | en |
| dc.description.sponsorship | This work was supported by Research Ireland (formerly Science Foundation Ireland) through the AMBER Research Centre (SFI‐12/RC/2278_P2) and the Frontiers for the Future PI Award (24/FFP‐A/13329). SFI/HEA Irish Centre for High‐End Computing (ICHEC) is acknowledged for the provision of computational facilities and support. | |
| dc.description.version | Published Version | |
| dc.format.extent | 10 | |
| dc.format.mimetype | application/pdf | en |
| dc.identifier.articleid | e70464 | |
| dc.identifier.authororcid | Ansari, Lida§0000-0002-9284-2832 | |
| dc.identifier.authororcid | Hurley, Paul K. | |
| dc.identifier.authororcid | Gity, Farzan | |
| dc.identifier.citation | Ansari, L, Hurley, P K & Gity, F 2026, 'Orientation-engineered PtTe 2 Schottky FETs: Quantum transport insights for dopant-free advanced technology nodes', Advanced Electronic Materials, vol. 12, no. 16, e70464, pp. 1-10. https://doi.org/10.1002/aelm.70464 | |
| dc.identifier.doi | 10.1002/aelm.70464 | |
| dc.identifier.endpage | 10 | |
| dc.identifier.issn | 2199-160X | |
| dc.identifier.issued | 16 | |
| dc.identifier.journaltitle | Advanced Electronic Materials | |
| dc.identifier.startpage | 1 | |
| dc.identifier.uri | https://hdl.handle.net/10468/19074 | |
| dc.identifier.volume | 12 | |
| dc.language.iso | en | |
| dc.publisher | John Wiley and Sons Inc | |
| dc.rights | © 2026, the Author(s). Advanced Electronic Materials published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided theoriginal work is properly cited. | |
| dc.rights.accessrights | open access | |
| dc.rights.licensename | Attribution 4.0 International | |
| dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | |
| dc.status | Peer reviewed | |
| dc.subject | Density functional theory | |
| dc.subject | PtTe | |
| dc.subject | Quantum transport simulations | |
| dc.subject | Schottky field-effect transistors | |
| dc.subject | Semimetals | |
| dc.subject | Transition metal dichalcogenides | |
| dc.subject | Two-dimensional materials | |
| dc.subject | [TyndallMicroNano] | |
| dc.title | Orientation-engineered PtTe2 Schottky FETs: Quantum transport insights for dopant-free advanced technology nodes | en |
| dc.type | Article (peer-reviewed) |
