High-speed electro-absorption modulator assisted by iron doping for micro-transfer-printing integration

Shi, Shengtai; Mulcahy, Jack; Dai, Xing; Peters, Frank H.

High-speed electro-absorption modulator assisted by iron doping for micro-transfer-printing integration

Files

High-speed Electro-absorption Modulator Assisted by Iron Doping for Micro-Transfer-Printing Integration - IEEE Silicon Photonics 2024.pdf(416.08 KB)

Accepted Version

Date

2024-06-10

Authors

Shi, Shengtai

Mulcahy, Jack

Dai, Xing

Peters, Frank H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Published Version

https://doi.org/10.1109/SiPhotonics60897.2024.10544327

Abstract

A high-speed lumped-element electro-absorption modulator designed for micro-transfer-printing onto silicon has been tested. The modulators use an iron doped layer to reduce the parasitic capacitance of the devices after transfer-printing, which is beneficial for achieving high bandwidth for heterogeneous integration applications with silicon photonics.

Keywords

Modulator , Heterogeneous integration , Micro transfer printing , High-speed photonics

Citation

Shi, S., Mulcahy, J., Dai, X. and Peters, F. H. (2024) 'High-speed electro-absorption modulator assisted by iron doping for micro-transfer-printing integration', 2024 IEEE Silicon Photonics Conference (SiPhotonics), Tokyo Bay, Japan, 15-18 April, pp. 1-2. doi: https://doi.org/10.1109/SiPhotonics60897.2024.10544327

URI

https://hdl.handle.net/10468/16140

Collections

Tyndall National Institute - Conference Items

Copyright

© 2024, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

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