A study of capacitance-voltage hysteresis in HfO2/InGaAs metal-oxide-semiconductor systems
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Date
2015-02-26
Authors
Lin, Jun
Monaghan, Scott
Cherkaoui, Karim
Povey, Ian M.
O'Connor, Éamon
Sheehan, Brendan
Hurley, Paul K.
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
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Abstract
In this work, we performed a study of capacitance-voltage (C-V) hysteresis in HfO2 /InGaAs metal-oxide-semiconductor (MOS) systems. C-V hysteresis measurement with a stress time in accumulation has been used in this investigation. Charge trapping density estimated from C-V hysteresis at all stress times is comparable to or even greater than the interface state density in HfO2 /InGaAs MOS systems, indicating that C-V hysteresis is an important problem to resolve. C-V hysteresis is observed to increase with a power law dependence on the increasing stress time in accumulation. The majority of the charge trapping is a reversible behaviour in the case of the n-InGaAs, but there is a significant permanent trapping component in the p-InGaAs sample. Based on an oxide thickness series, it is demonstrated that C-V hysteresis increases linearly with the increasing oxide thickness with the charge trapping density being a constant value for all thicknesses, indicating that the trapping is predominately localised in a plane (in cm -2 ) near/at the HfO2 /InGaAs interfacial oxide transition layer.
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Keywords
C-V hysteresis , Charge trapping , Stress , HfO2 , InGaAs , MOS , Power law dependence
Citation
Lin, J., Monaghan, S., Cherkaoui, K., Povey, I. M., O'Connor, É., Sheehan, B. and Hurley, P. K. (2014) 'A study of capacitance-voltage hysteresis in HfO2/InGaAs metal-oxide-semiconductor systems', 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), pp. 36-40. doi: 10.1109/IIRW.2014.7049503
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