A study of capacitance-voltage hysteresis in HfO2/InGaAs metal-oxide-semiconductor systems

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dc.contributor.authorLin, Jun
dc.contributor.authorMonaghan, Scott
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorPovey, Ian M.
dc.contributor.authorO'Connor, Éamon
dc.contributor.authorSheehan, Brendan
dc.contributor.authorHurley, Paul K.
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2022-06-28T09:17:49Z
dc.date.available2022-06-28T09:17:49Z
dc.date.issued2015-02-26
dc.date.updated2022-06-27T09:10:19Z
dc.description.abstractIn this work, we performed a study of capacitance-voltage (C-V) hysteresis in HfO2 /InGaAs metal-oxide-semiconductor (MOS) systems. C-V hysteresis measurement with a stress time in accumulation has been used in this investigation. Charge trapping density estimated from C-V hysteresis at all stress times is comparable to or even greater than the interface state density in HfO2 /InGaAs MOS systems, indicating that C-V hysteresis is an important problem to resolve. C-V hysteresis is observed to increase with a power law dependence on the increasing stress time in accumulation. The majority of the charge trapping is a reversible behaviour in the case of the n-InGaAs, but there is a significant permanent trapping component in the p-InGaAs sample. Based on an oxide thickness series, it is demonstrated that C-V hysteresis increases linearly with the increasing oxide thickness with the charge trapping density being a constant value for all thicknesses, indicating that the trapping is predominately localised in a plane (in cm -2 ) near/at the HfO2 /InGaAs interfacial oxide transition layer.en
dc.description.sponsorshipScience Foundation Ireland (INVENT project 09/IN.1/I2633)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationLin, J., Monaghan, S., Cherkaoui, K., Povey, I. M., O'Connor, É., Sheehan, B. and Hurley, P. K. (2014) 'A study of capacitance-voltage hysteresis in HfO2/InGaAs metal-oxide-semiconductor systems', 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), pp. 36-40. doi: 10.1109/IIRW.2014.7049503en
dc.identifier.doi10.1109/IIRW.2014.7049503en
dc.identifier.eissn2374-8036
dc.identifier.endpage40en
dc.identifier.isbn978-1-4799-7274-6
dc.identifier.isbn978-1-4799-7308-8
dc.identifier.isbn978-1-4799-7286-9
dc.identifier.issn1930-8841
dc.identifier.startpage36en
dc.identifier.urihttps://hdl.handle.net/10468/13319
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.ispartof2014 IEEE International Integrated Reliability Workshop Final Report (IIRW)
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/09/IN.1/I2633/IE/Investigating Emerging Non-Silicon Transistors (INVENT)/en
dc.relation.urihttps://www.aconf.org/conf_52662.html
dc.rights© 2014, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectC-V hysteresisen
dc.subjectCharge trappingen
dc.subjectStressen
dc.subjectHfO2en
dc.subjectInGaAsen
dc.subjectMOSen
dc.subjectPower law dependenceen
dc.titleA study of capacitance-voltage hysteresis in HfO2/InGaAs metal-oxide-semiconductor systemsen
dc.typeConference itemen
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