Determination of physical parameters for HfO 2/SiO x/TiN MOSFET gate stacks by electrical characterization and reverse modeling
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Accepted Version
Date
2008-05-23
Authors
Monaghan, Scott
Hurley, Paul K.
Cherkaoui, Karim
Negara, Muhammad Adi
Schenk, A.
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Journal ISSN
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Publisher
Institute of Electrical and Electronics Engineers (IEEE)
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Abstract
In this paper we present the results of a combined electrical and modeling study to determine the tunneling electron effective mass and electron affinity for HfO 2 . Experimental capacitance-voltage (C-V) and current-voltage (I-V) characteristics are presented for HfO 2 films deposited on Si(100) substrates by atomic layer deposition (ALD) and electron beam evaporation (e-beam), with equivalent oxide thickness in the range 10 and 12.5A. We extend on previous studies by applying a self-consistent 1D- Schrodinger-Poisson solver to the entire gate stack, including the inter-layer SiO x region and to the adjacent substrate for non-local barrier tunneling self- consistently linked to the quantum-drift-diffusion transport model. The reverse modeling is applied to the correlated gate and drain currents in long channel MOSFET structures. Values of 0.11 + (0.03) m o and 2.0 + (0.25) eV were determined for the HfO 2 electron effective mass and electron affinity.
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Keywords
Hafnium oxide , Decision support systems , Quadratic programming
Citation
Monaghan, S., Hurley, P. K., Cherkaoui, K., Negara, M. A. and Schenk, A. (2008) 'Determination of physical parameters for HfO2/SiOx/TiN MOSFET gate stacks by electrical characterization and reverse modeling', 2008 9th International Conference on Ultimate Integration of Silicon, Udine, Italy, 12-14 March, pp. 107-110. doi: 10.1109/ULIS.2008.4527151
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