Determination of physical parameters for HfO 2/SiO x/TiN MOSFET gate stacks by electrical characterization and reverse modeling
dc.contributor.author | Monaghan, Scott | en |
dc.contributor.author | Hurley, Paul K. | |
dc.contributor.author | Cherkaoui, Karim | |
dc.contributor.author | Negara, Muhammad Adi | |
dc.contributor.author | Schenk, A. | |
dc.contributor.funder | Sixth Framework Programme | |
dc.contributor.funder | Science Foundation Ireland | |
dc.contributor.funder | Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung | |
dc.date.accessioned | 2023-05-23T11:06:13Z | |
dc.date.available | 2023-05-19T17:06:02Z | en |
dc.date.available | 2023-05-23T11:06:13Z | |
dc.date.issued | 2008-05-23 | |
dc.date.updated | 2023-05-19T16:06:06Z | en |
dc.description.abstract | In this paper we present the results of a combined electrical and modeling study to determine the tunneling electron effective mass and electron affinity for HfO 2 . Experimental capacitance-voltage (C-V) and current-voltage (I-V) characteristics are presented for HfO 2 films deposited on Si(100) substrates by atomic layer deposition (ALD) and electron beam evaporation (e-beam), with equivalent oxide thickness in the range 10 and 12.5A. We extend on previous studies by applying a self-consistent 1D- Schrodinger-Poisson solver to the entire gate stack, including the inter-layer SiO x region and to the adjacent substrate for non-local barrier tunneling self- consistently linked to the quantum-drift-diffusion transport model. The reverse modeling is applied to the correlated gate and drain currents in long channel MOSFET structures. Values of 0.11 + (0.03) m o and 2.0 + (0.25) eV were determined for the HfO 2 electron effective mass and electron affinity. | |
dc.description.sponsorship | Sixth Framework Programme (PullNANO Project 1ST-026828); Science Foundation Ireland (05/IN/1751); Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung (Project NEQUATTRO SNF 200020–117613/1) | |
dc.description.status | Peer reviewed | en |
dc.description.version | Accepted Version | |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Monaghan, S., Hurley, P. K., Cherkaoui, K., Negara, M. A. and Schenk, A. (2008) 'Determination of physical parameters for HfO2/SiOx/TiN MOSFET gate stacks by electrical characterization and reverse modeling', 2008 9th International Conference on Ultimate Integration of Silicon, Udine, Italy, 12-14 March, pp. 107-110. doi: 10.1109/ULIS.2008.4527151 | |
dc.identifier.doi | 10.1109/ULIS.2008.4527151 | |
dc.identifier.endpage | 110 | |
dc.identifier.isbn | 978-1-4244-1729-2 | |
dc.identifier.isbn | 978-1-4244-1730-8 | |
dc.identifier.startpage | 107 | |
dc.identifier.uri | https://hdl.handle.net/10468/14492 | |
dc.language.iso | en | en |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | |
dc.relation.ispartof | 9th International Conference on Ultimate Integration of Silicon, Udine, Italy, 12-14 March 2008 | |
dc.rights | © 2008, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | |
dc.subject | Hafnium oxide | |
dc.subject | Decision support systems | |
dc.subject | Quadratic programming | |
dc.title | Determination of physical parameters for HfO 2/SiO x/TiN MOSFET gate stacks by electrical characterization and reverse modeling | en |
dc.type | Conference item |
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