Determination of physical parameters for HfO 2/SiO x/TiN MOSFET gate stacks by electrical characterization and reverse modeling

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dc.contributor.authorMonaghan, Scotten
dc.contributor.authorHurley, Paul K.
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorNegara, ‪Muhammad Adi
dc.contributor.authorSchenk, A.
dc.contributor.funderSixth Framework Programme
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderSchweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung
dc.date.accessioned2023-05-23T11:06:13Z
dc.date.available2023-05-19T17:06:02Zen
dc.date.available2023-05-23T11:06:13Z
dc.date.issued2008-05-23
dc.date.updated2023-05-19T16:06:06Zen
dc.description.abstractIn this paper we present the results of a combined electrical and modeling study to determine the tunneling electron effective mass and electron affinity for HfO 2 . Experimental capacitance-voltage (C-V) and current-voltage (I-V) characteristics are presented for HfO 2 films deposited on Si(100) substrates by atomic layer deposition (ALD) and electron beam evaporation (e-beam), with equivalent oxide thickness in the range 10 and 12.5A. We extend on previous studies by applying a self-consistent 1D- Schrodinger-Poisson solver to the entire gate stack, including the inter-layer SiO x region and to the adjacent substrate for non-local barrier tunneling self- consistently linked to the quantum-drift-diffusion transport model. The reverse modeling is applied to the correlated gate and drain currents in long channel MOSFET structures. Values of 0.11 + (0.03) m o and 2.0 + (0.25) eV were determined for the HfO 2 electron effective mass and electron affinity.
dc.description.sponsorshipSixth Framework Programme (PullNANO Project 1ST-026828); Science Foundation Ireland (05/IN/1751); Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung (Project NEQUATTRO SNF 200020–117613/1)
dc.description.statusPeer revieweden
dc.description.versionAccepted Version
dc.format.mimetypeapplication/pdfen
dc.identifier.citationMonaghan, S., Hurley, P. K., Cherkaoui, K., Negara, M. A. and Schenk, A. (2008) 'Determination of physical parameters for HfO2/SiOx/TiN MOSFET gate stacks by electrical characterization and reverse modeling', 2008 9th International Conference on Ultimate Integration of Silicon, Udine, Italy, 12-14 March, pp. 107-110. doi: 10.1109/ULIS.2008.4527151
dc.identifier.doi10.1109/ULIS.2008.4527151
dc.identifier.endpage110
dc.identifier.isbn978-1-4244-1729-2
dc.identifier.isbn978-1-4244-1730-8
dc.identifier.startpage107
dc.identifier.urihttps://hdl.handle.net/10468/14492
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.ispartof9th International Conference on Ultimate Integration of Silicon, Udine, Italy, 12-14 March 2008
dc.rights© 2008, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
dc.subjectHafnium oxide
dc.subjectDecision support systems
dc.subjectQuadratic programming
dc.titleDetermination of physical parameters for HfO 2/SiO x/TiN MOSFET gate stacks by electrical characterization and reverse modelingen
dc.typeConference item
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