Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperatures
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Accepted Version
Date
2024-03-27
Authors
La Torraca, Paolo
Padovani, Andrea
Wernersson, Lars-Erik
Cherkaoui, Karim
Hurley, Paul
Larcher, Luca
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published Version
Abstract
The effects of defects in In 0.47 Ga 0.53 As/Al 2 O 3 /Ni metal-oxide-semiconductor (MOS) stacks at cryogenic temperatures are investigated. The MOS stacks exhibit a hysteresis in the capacitance-voltage (CV) curve, both at room temperature and at 100K, indicating the presence of effective charge capture/emission dynamics in the oxide even at cryogenic temperatures. Border traps (BTs) in the Al 2 O 3 close to the In 0.47 Ga 0.53 As/Al 2 O 3 interface are recognized as the best candidate for explaining the experimental CV. The hysteresis shape and its temperature dependence are used to profile the oxide defects’ properties, which allow correctly predicting the MOS stacks CV and conductance-voltage (GV) frequency dispersions and gaining insights on the hysteresis dynamics.
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Keywords
Al2O3 , Capacitance , Cryogenic , Hysteresis , InGaAs
Citation
La Torraca, P., Padovani, A., Wernersson, L.-E., Cherkaoui, K., Hurley, P. and Larcher, L. (2024) 'Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperatures', 2023 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA, 2023, pp. 1-5. https://doi.org/10.1109/IIRW59383.2023.10477706
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