Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperatures

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dc.contributor.authorLa Torraca, Paoloen
dc.contributor.authorPadovani, Andreaen
dc.contributor.authorWernersson, Lars-Eriken
dc.contributor.authorCherkaoui, Karimen
dc.contributor.authorHurley, Paulen
dc.contributor.authorLarcher, Lucaen
dc.contributor.funderHorizon 2020en
dc.date.accessioned2024-05-08T09:15:32Z
dc.date.available2024-05-08T09:15:32Z
dc.date.issued2024-03-27en
dc.description.abstractThe effects of defects in In 0.47 Ga 0.53 As/Al 2 O 3 /Ni metal-oxide-semiconductor (MOS) stacks at cryogenic temperatures are investigated. The MOS stacks exhibit a hysteresis in the capacitance-voltage (CV) curve, both at room temperature and at 100K, indicating the presence of effective charge capture/emission dynamics in the oxide even at cryogenic temperatures. Border traps (BTs) in the Al 2 O 3 close to the In 0.47 Ga 0.53 As/Al 2 O 3 interface are recognized as the best candidate for explaining the experimental CV. The hysteresis shape and its temperature dependence are used to profile the oxide defects’ properties, which allow correctly predicting the MOS stacks CV and conductance-voltage (GV) frequency dispersions and gaining insights on the hysteresis dynamics.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationLa Torraca, P., Padovani, A., Wernersson, L.-E., Cherkaoui, K., Hurley, P. and Larcher, L. (2024) 'Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperatures', 2023 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA, 2023, pp. 1-5. https://doi.org/10.1109/IIRW59383.2023.10477706en
dc.identifier.doi10.1109/IIRW59383.2023.10477706en
dc.identifier.eissn2374-8036en
dc.identifier.endpage5en
dc.identifier.isbn979-8-3503-2727-4en
dc.identifier.isbn979-8-3503-2728-1en
dc.identifier.issn1930-8841en
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/15838
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.ispartof2023 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA, 2023en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/871764/EU/Cryogenic 3D Nanoelectronics/SEQUENCEen
dc.rights© 2024, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectAl2O3en
dc.subjectCapacitanceen
dc.subjectCryogenicen
dc.subjectHysteresisen
dc.subjectInGaAsen
dc.titleElectrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperaturesen
dc.typeConference itemen
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